HIGH-POWER DIAMOND METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR (MISFET) WITH OPTO-ACTIVATED CHANNEL AND MANUFACTURING PROCESS

The invention comprises the design of a diamond MISFET with opto-activated gate for high power by LED-IR light emitter and lateral/selective growth. The use of an opto-activated gate confers a novel performance which, together with the use of standard vertical growth on the substrate and selective lateral growth for the source and drain contacts, gives the MISFET device a three-dimensional structure. This device avoids gate leakage due to oxide, avoids edge effects from metal contacts and high internal electric fields, improves the crystalline quality of the diamond and reduces the time, cost and size of the device giving it greater versatility for implementation on more complex architectures.