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Memristive Devices Based on Semiconductive Polymer Materials Using the Ionic Migration Phenomenon
ES 2927156 B2
The present invention relates to a memristive device comprising: a first electrode on which an active layer is arranged, said layer comprising an ionic salt, an electronic polymer semiconductor that is a polyphenylene vinylene derivative, a polymer ion conductor that is a polybranched polymer with amine derivative monomers and anhydride derivative monomers; and a second electrode. The invention also relates to the use of said device in microelectronics.
This material is sensitive to incident light radiation, so its intrinsic resistance is a function of the number of photons of a specific frequency that it is capable of absorbing. Therefore, it is a technologically advanced material capable of functioning at the same time as an electromagnetic frequency sensor and as a hardware-based signal preprocessor..