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Ionization sensitive field effect device and manufacturing method thereof
WO2018087787
The present invention concerns a sensitive field effect device (100) comprising a semiconductor channel (110), a source electrode (120) connected to said semiconductor channel (110), a drain electrode (130) connected to said semiconductor channel (110), such that said semiconductor channel (110) is interposed between said source electrode (120) and said drain electrode (130), a gate electrode (140) and a dielectric layer (150) interposed between said gate electrode (140) and said semiconductor channel (110), characterized in that said semiconductor channel (110) is a layer and is made of an amorphous oxide and in that said sensor means (170, 171, 172, 173, 174, 175, 175) are configured to change the voltage between said gate electrode (140) and said source electrode (120) upon a sensing event capable of changing their electrical state. The present invention also concerns a sensor and a method for manufacturing said field effect device (100).
The present invention relates to a sensitive field effect device and manufacturing method thereof. More specifically, the invention concerns a field effect transistor, designed to feature a low leakage current as well as a high bandwidth, so as to be highly sensitive, if compared with analogous sensors according to the prior art. It is also particularly indicated for detecting circuits and designed to detect several kind of physical quantities, such as temperature, mechanical stresses, light, chemicals, ionizing radiation, such as X-rays and the like, and also suitable to be arranged in flexible substrates arrays or matrix.