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ELECTRONIC SEMICONDUCTOR DEVICE BASED ON COPPER NICKEL AND GALLIUM-TIN-ZINC-COPPER-TITANIUM P AND N-TYPE OXIDES, THEIR APPLICATIONS AND CORRESPONDING MANUFACTURE PROCESS
US2010090216
The present invention corresponds to the use of p and n-type oxide semiconductors based on copper nickel (OCux Niy, with 0<x<3; 0<y<3) or multicomponent Gallium-Tin-Zinc-Copper-Titanium oxide, designated here after as GSZTCO, in different molar compositions, having an amorphous or crystalline structure and with the electrical characteristics of a donor or electron acceptor semiconductor, doped or not doped with impurities, such as, Zirconium or nickel or nitrogen, as a way to control the semiconductor electronic behaviour (valence); including the manufacture process at room temperature or temperatures below 100 degrees centigrade and their applications in optoelectronic and electronic fields is to manufacture devices, such as, Complementary-Metal-Oxide-Semi-conductors, thin film transistors, pn heterojunctions, logic gates, O-ring oscillators, using as substrate glass, metal foils, polymers or cellulose materials, in which a protection layer based on magnesium fluoride is used, together with a tantalum oxide matching layer of the active semiconductors to a dielectric, such as, silicon dioxide.
The fabrication steps used in the present invention, are compatible with the existing fabrication steps in the electronic or optoelectronic or semiconductor industries, namely the sputtering techniques for large area processes or the thermal evaporation or the sol-gel, not needing so large investments concerning research and development concerning the matching of the laboratory technology processes to the industry since industries are already able to fabricate large area thin films based on passive oxide semiconductors to produce conductive and transparent electrical contacts.