Large area electroabsorption modulator

The scientific result demonstrates the development of a proprietary electro-absorption modulator technology based on III-V semiconductors, employing vertically operating quantum-well structures as an alternative to conventional waveguide-based devices.

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The work shows that very high modulation bandwidths (>50 GHz and up to ~100 GHz) can be achieved with compact device geometries and low drive voltages, across a wide spectral range (850–1600 nm using InP and GaAs, with extensions to visible and near-UV using GaN). The vertical architecture enables natural out-of-plane optical coupling, alleviating coupling constraints and broadening applicability to areas such as wireless optical links, sensing, and advanced photonic processing.