PROCESS FOR USING AND PRODUCING PAPER BASED ON NATURAL CELLULOSE FIBERS, SYNTHETIC FIBERS OR MIXED FIBERS AS PHYSICAL SUPPORT AND STORING MEDIUM FOR ELECTRICAL CHARGES IN SELF-SUSTAINING FIELD-EFFECT TRANSISTORS WITH MEMORY USING ACTIVE SEMICONDUCTOR OXIDES

The present invention refers to the use and creation of materials based on natural cellulose fibbers, synthetic fibbers, or mixed fibbers as physical support and storing medium or storage inducer of electrical and ionic charges in self-sustaining discrete or complementary field-effect transistors with non-volatile memory by using organic or inorganic active semiconductors for the manufacture of the channel regions that are deposited on the fibbers of the paper material as well as metals or passive semiconductors for manufacturing drain and source allowing the interconnection of fibbers, in addition to the gate electrode contact existing on the other side-face of the paper, p or n type respectively, in monolithic or hybrid forms.