Resistive Bolometric Sensor
ES2773726B2
Bolometric resistive sensor (22) comprising a thin film (23) based on a high-temperature superconducting sensor that heats up when it absorbs electromagnetic radiation, varying its electrical resistance: and means (11) to measure said variation in electrical resistance and infer a quantity of radiation absorbed. Said thin film (23) includes one or more regions with a non-optimal doping level, so that it does not maximize a critical superconducting temperature of the bolometric sensor (22).
In order to eliminate some of the disadvantages of HTS-TES sensors compared to semiconductor sensors, in particular to increase the saturation power to make it comparable to semiconductor sensors, and also to relax the stability requirements of the cryogenic bath, thus making it less complex, the present invention provides a resistive bolometric sensor that, like the bolometers of the state of the art, comprises a thin film based on a high temperature superconducting sensor that heats up when it absorbs electromagnetic radiation, varying an electrical resistance of the bolometric sensor; and means for measuring said variation in electrical resistance and inferring the amount of radiation absorbed.

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